1/5 x04 series sensitive 4a scr s september 2000 - ed: 3 main features: description thanks to highly sensitive triggering levels, the x04 scr series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies... symbol value unit i t(rms) 4a v drm /v rrm 600 and 800 v i gt 50 to 200 m a absolute ratings (limiting values) symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) tl = 60c 4 a tamb = 25c 1.35 it (av) average on-state current (180 conduction angle) tl = 60c 2.5 a ta m b = 2 5 c 0 . 9 i tsm non repetitive surge peak on-state current tp = 8.3 ms tj = 25c 33 a tp = 10 ms 30 i 2 ti 2 t value for fusing tp = 10 ms tj = 25c 4.5 a 2 s di/dt critical rate of rise of on-state current i g =2xi gt ,tr 100ns f = 60 hz tj = 125c 50 a/s i gm peak gate current tp = 20 s tj = 125c 1.2 a p g(av) average gate power dissipation tj = 125c 0.2 w t stg tj storage junction temperature range operating junction temperature range - 40to+150 -40to+125 c to202-3 (x04xxf)
x04 series 2/5 electrical characteristics (tj = 25c, unless otherwise specified) thermal resistances product selector symbol test conditions x04xx unit 02 05 i gt v d =12v r l =140 w min. _ 20 a max. 200 50 v gt max. 0.8 v v gd v d =v drm r l =3.3k w r gk =1k w tj = 125c min. 0.1 v v rg i rg =10 m a min. 8v i h i t =50ma r gk =1k w max. 5 ma i l i g =1ma r gk =1k w min. 6 ma dv/dt v d =67%v drm r gk =1k w tj = 110c min. 10 15 v/s v tm i tm =8a tp=380s tj = 25c max. 1.8 v v t0 threshold voltage tj = 125c max. 0.95 v r d dynamic resistance tj = 125c max. 100 m w i drm i rrm v drm =v rrm r gk =1k w tj = 25c max. 5 a tj = 125c 1 ma symbol parameter value unit r th(j-l) junction to leads (dc) 15 c/w r th(j-a) junction to ambient (dc) 100 part number vo ltage sensitivity package 600 v 800 v x0402mf x 200 a to202-3 x0402nf x 200 a to202-3 X0405MF x 50 a to202-3 x0405nf x 50 a to202-3
x04 series 3/5 ordering information other information note : xx = sensitivity, y = voltage part number marking weight base quantity packing mode x04xxyf 1aa2 x04xxyf 0.8 g 250 bulk x04xxyf 0aa2 x04xxyf 0.8 g 50 tube fig. 1: maximum average power dissipation versus average on-state current. fig. 2-1: average and d.c. on-state current versus lead temperature. fig. 2-2: average and d.c. on-state current versus ambient temperature (device mounted on fr4 with recommended pad layout). fig. 3: relative variation of thermal impedance junction to ambient versus pulse duration.
x04 series 4/5 fig. 4: relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). fig. 5: relative variation of holding current versus gate-cathode resistance (typical values). fig. 6: relative variation of dv/dt immunity versus gate-cathode resistance (typical values). fig. 7: relative variation of dv/dt immunity versus gate-cathode capacitance (typical values). fig. 8: surge peak on-state current versus number of cycles. fig. 9: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of i2t.
x04 series 5/5 fig. 10: on-state characteristics (maximum values). package mechanical data to202-3 (plastic) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 10.1 0.398 c 7.3 0.287 d10.5 0.413 f1.50.059 h0.51 0.020 j 1.5 0.059 m 4.5 0.177 n5.30.209 n1 2.54 0.100 o1.40.055 p0.70.028 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2000 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco singapore - spain - sweden - switzerland - united kingdom http://www.st.com
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